Title:
METHOD FOR FORMING HIGH DENSITY PATTERN
Document Type and Number:
WIPO Patent Application WO/2022/022035
Kind Code:
A1
Abstract:
A method for forming a high density pattern, comprising: providing a substrate; forming a hard mask layer on the substrate; forming a sacrificial layer on the hard mask layer; forming photoresists provided at intervals on the sacrificial layer; etching the sacrificial layer, so that the sacrificial layer forms mandrels corresponding one-to-one to the photoresists, and the size of the cross section of each mandrel gradually decreases from the end of the mandrel away from the hard mask layer to the end close to the hard mask layer; forming an isolation layer on the mandrels; removing the isolation layer located at the top of each mandrel, the isolation layer covering the hard mask layer, and the mandrels, to form an isolation side wall pattern; and transferring the isolation side wall pattern to the hard mask layer.
Inventors:
WU CHEN'EN (CN)
Application Number:
PCT/CN2021/095842
Publication Date:
February 03, 2022
Filing Date:
May 25, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/027; G03F1/80; H01L21/033
Foreign References:
| CN103515197A | 2014-01-15 | |||
| CN101546694A | 2009-09-30 | |||
| CN102299137A | 2011-12-28 | |||
| US20140291735A1 | 2014-10-02 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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