METHOD FOR FORMING METAL BODY, METAL BODY, AND MATING-CONNECTION TERMINAL COMPRISING SAID METAL BODY

WIPO Patent Application WO/2022/130897

A1

Provided are: a method that is for forming a metal body and that is capable of quickly forming a metal body in which the occurrence of whiskers due to external stress is inhibited; a metal body; and a mating-connection terminal comprising the metal body. This method is for forming a metal body in which a barrier layer and a metal-plating layer are layered on the metal substrate in the stated order. Said method comprises: a barrier layer-layering step for layering, on a metal base, a barrier layer containing Ni as a main component; and a metal-plating layer-layering step for subjecting the barrier layer to a PR plating treatment, in which the current density is 1-50 A/dm2, the duty ratio is more than 0.8 but less than 1, and the ratio of the current density of the forward current to the current density of the backward current is current densityforward current:current densitybackward current = 1:0.5 to 1:3, and thereafter, subjecting the barrier layer to a DC plating treatment, in which the current density is 1-50 A/dm2, to layer a metal plating layer on the barrier layer.

IWAMOTO HIROYUKI (JP)
MUNEKATA OSAMU (JP)
TSURUTA KAICHI (JP)
NAKAMURA KATSUJI (JP)
KONDOH SHIGEKI (JP)
TSUCHIYA MASATO (JP)
TACHIBANA YOSHIE (JP)

PCT/JP2021/042577

June 23, 2022

November 19, 2021

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SENJU METAL INDUSTRY CO (JP)

C25D5/12; C25D5/18; C25D7/00; H01R13/03; H01R43/16

JP2020503866A	2020-02-06
JP2012241561A	2012-12-10
JP2012002342A	2012-01-05
KR20160016348A	2016-02-15
CN110274372A	2019-09-24
JP2002018960A	2002-01-22
JPS62221526A	1987-09-29

KENMOTSU Hidetaka (JP)

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