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Title:
METHOD FOR FORMING NANOPARTICLES, AND METHOD FOR MANUFACTURING A FLASH MEMORY DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2011/105871
Kind Code:
A3
Abstract:
The present invention relates to a method for forming nanoparticles, which uses a sputtering process to easily adjust the density and size of nanoparticles, and to a method for manufacturing a flash memory device using the method. The method for forming nanoparticles according to the present invention comprises: a step of forming a polycrystalline oxide film, which involves forming a polycrystalline oxide film made of an oxide of M1 on a substrate; and a nanoparticle-forming step of providing M2, which is activated by plasma, and/or an oxide of M2 on the polycrystalline oxide film so as to form, on the substrate, an oxide film made of the oxide of M2, wherein the oxide of M2 contains M1 nanoparticles, and wherein M1 and M2 are each one element selected from a group consisting of silicon (Si), germanium (Ge) and a metal, and wherein M1 and M2 are different from each other.

Inventors:
KIM TAE-WHAN (KR)
JUNG JAE-HOON (KR)
YUK JONG-MIN (KR)
LEE JEONG-YONG (KR)
Application Number:
PCT/KR2011/001395
Publication Date:
February 02, 2012
Filing Date:
February 28, 2011
Export Citation:
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Assignee:
IUCF HYU (KR)
KIM TAE-WHAN (KR)
JUNG JAE-HOON (KR)
YUK JONG-MIN (KR)
LEE JEONG-YONG (KR)
International Classes:
B82B3/00
Foreign References:
KR20090011334A2009-02-02
KR20070010814A2007-01-24
KR100765377B12007-10-10
JP2005213067A2005-08-11
Attorney, Agent or Firm:
SONG, Kyeong-Keun et al. (1621-25 Seocho-dong, Seocho-gu, Seoul 137-878, KR)
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