METHOD FOR FORMING PATTERN - TOKYO ELECTRON LTD

Title:

METHOD FOR FORMING PATTERN

Document Type and Number:

WIPO Patent Application WO/2014/171377

Kind Code:

A1

Abstract:

Provided is a method for forming a pattern on a base layer of a workpiece. This method involves (a) a step in which a block copolymer layer containing a first polymer and a second polymer and capable of self-organizing is formed on a base layer, (b) a step in which the workpiece is processed so as to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer, (c) a step in which, after the step for processing the workpiece, the second region is etched partway in the film thickness direction of the second region in a capacitively-coupled plasma processing device, (d) a step in which, after the step for etching the second region, a negative direct voltage is applied to an upper electrode of the plasma processing device to generate secondary electrons from said upper electrode, and the workpiece is irradiated with said secondary electrons, and (e) a step in which, after the step for irradiating the workpiece with secondary electrons, the second region is further etched in the plasma processing device.

Inventors:

MORIKITA SHINYA (US)
NISHIMURA EIICHI (JP)
YAMASHITA FUMIKO (JP)

Application Number:

PCT/JP2014/060307

Publication Date:

October 23, 2014

Filing Date:

April 09, 2014

Export Citation:

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Assignee:

TOKYO ELECTRON LTD (JP)

International Classes:

H01L21/3065; H01L21/027; H05H1/46

Domestic Patent References:

WO2011036816A1

2011-03-31

Foreign References:

JP2008043873A	2008-02-28
JP2010192668A	2010-09-02
JP2011199243A	2011-10-06
JP2013033856A	2013-02-14
JPH0224661A	1990-01-26
JP2007208255A	2007-08-16
JP2010269304A	2010-12-02

Other References: