Title:
METHOD OF FORMING AND REPAIRING A LITHOGRAPHIC TEMPLATE HAVING A GAP DEFECT
Document Type and Number:
WIPO Patent Application WO2004011258
Kind Code:
A3
Abstract:
This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template (10) is formed having a relief structure (26) and a repaired gap defect (36) within the relief structure (26). The template (10) is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template (10) in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (40).
Inventors:
MANCINI DAVID P
DAUKSHER WILLIAM J
NORDQUIST KEVIN J
RESNICK DOUGLAS J
DAUKSHER WILLIAM J
NORDQUIST KEVIN J
RESNICK DOUGLAS J
Application Number:
PCT/US2003/021759
Publication Date:
July 29, 2004
Filing Date:
July 11, 2003
Export Citation:
Assignee:
MOTOROLA INC (US)
International Classes:
G03F7/20; B29C59/16; G03F1/60; G03F7/00; G03F7/16; G21K5/00; H01L21/027; H01L21/3205; H01L21/4763; H05B6/00; B41C; (IPC1-7): G03F1/00; G03F7/00
Domestic Patent References:
| WO1981003628A1 | 1981-12-24 |
Foreign References:
| US6387787B1 | 2002-05-14 | |||
| US20010028045A1 | 2001-10-11 | |||
| US5609925A | 1997-03-11 |
Other References:
M. COLBURN, T. BAILEY, B.J. CHOI ET AL: "Development and advantages of step-and-flash lithography", SOLID STATE TECHNOLOGY, vol. 46, no. 7, 1 July 2001 (2001-07-01), pages 67ff, XP002279173, Retrieved from the Internet [retrieved on 20040505]
MANCINI D P ET AL: "Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (MICROELECTRONICS AND NANOMETER STRUCTURES), NOV. 2002, AIP FOR AMERICAN VACUUM SOC, USA, VOL. 20, NR. 6, PAGE(S) 2896 - 2901, ISSN: 0734-211X, XP002279174
BAILEY T ET AL: "Step and flash imprint lithography: Template surface treatment and defect analysis", 44TH INTERNATIONAL CONFERENCE ON ELECTRON, ION, AND PHOTON BEAM TECHNOLOGY AND NANOFABRICATION, RANCHO MIRAGE, CA, USA, 30 MAY-2 JUNE 2000, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (MICROELECTRONICS AND NANOMETER STRUCTURES), NOV. 2000, AIP FOR AMERICAN VACUUM SOC, USA, PAGE(S) 3572 - 3577, ISSN: 0734-211X, XP002279175
COLBURN M ET AL: "STEP AND FLASH IMPRINT LITHOGRAPHY FOR SUB-100NM PATTERNING", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, VOL. 3997, PAGE(S) 453-457, ISSN: 0277-786X, XP008005417
COLBURN M ET AL: "STEP AND FLASH IMPRINT LITHOGRAPHY: A NEW APPROACH TO HIGH-RESOLUTION PATTERNING", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, VOL. 3676, PAGE(S) 379-389, ISSN: 0277-786X, XP008011830
MANCINI D P ET AL: "Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (MICROELECTRONICS AND NANOMETER STRUCTURES), NOV. 2002, AIP FOR AMERICAN VACUUM SOC, USA, VOL. 20, NR. 6, PAGE(S) 2896 - 2901, ISSN: 0734-211X, XP002279174
BAILEY T ET AL: "Step and flash imprint lithography: Template surface treatment and defect analysis", 44TH INTERNATIONAL CONFERENCE ON ELECTRON, ION, AND PHOTON BEAM TECHNOLOGY AND NANOFABRICATION, RANCHO MIRAGE, CA, USA, 30 MAY-2 JUNE 2000, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (MICROELECTRONICS AND NANOMETER STRUCTURES), NOV. 2000, AIP FOR AMERICAN VACUUM SOC, USA, PAGE(S) 3572 - 3577, ISSN: 0734-211X, XP002279175
COLBURN M ET AL: "STEP AND FLASH IMPRINT LITHOGRAPHY FOR SUB-100NM PATTERNING", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, VOL. 3997, PAGE(S) 453-457, ISSN: 0277-786X, XP008005417
COLBURN M ET AL: "STEP AND FLASH IMPRINT LITHOGRAPHY: A NEW APPROACH TO HIGH-RESOLUTION PATTERNING", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, VOL. 3676, PAGE(S) 379-389, ISSN: 0277-786X, XP008011830
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