METHOD OF FORMING RESIST PATTERN - NIPPON TELEGRAPH & TELEPHONE

Title:

METHOD OF FORMING RESIST PATTERN

Document Type and Number:

WIPO Patent Application WO/2006/080428

Kind Code:

A1

Abstract:

A fine high-precision resist pattern excelling in etching resistance is formed. There is provided a method of forming a resist pattern, characterized by developing a resist composition being photosensitive to given light source in accordance with lithography technique and bringing resist pattern (2) thus formed on substrate (1) into contact with supercritical treatment liquid (5’) consisting of supercritical fluid (3’) containing crosslinking agent (4).

Inventors:

NAMATSU HIDEO (JP)
SATO MITSURU (JP)

Application Number:

PCT/JP2006/301297

Publication Date:

August 03, 2006

Filing Date:

January 27, 2006

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Assignee:

NIPPON TELEGRAPH & TELEPHONE (JP)
TOKYO OHKA KOGYO CO LTD (JP)
NAMATSU HIDEO (JP)
SATO MITSURU (JP)

International Classes:

G03F7/40; H01L21/027

Foreign References:

JP2003140359A	2003-05-14
JP2004233953A	2004-08-19
JP2004233954A	2004-08-19
JP2000112150A	2000-04-21
JP2000089477A	2000-03-31
JP2005223118A	2005-08-18

Attorney, Agent or Firm:

Shiga, Masatake (Yaesu Chuo-ku Tokyo, 53, JP)

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