Title:
METHOD FOR FORMING A SEMICONDUCTOR DEVICE WITH LOCAL SEMICONDUCTOR-ON- INSULATOR (SOI)
Document Type and Number:
WIPO Patent Application WO2005076795
Kind Code:
A3
Abstract:
A semiconductor on insulator transistor (45) is formed beginning with a bulk silicon substrate (12). An active region is defined in the substrate (12) and an oxygen-rich silicon layer that is monocrystalline is formed on a top surface of the active region. On this oxygen-rich silicon layer is grown an epitaxial layer of silicon. After formation of the epitaxial layer of silicon, the oxygen-rich silicon layer is converted to silicon oxide (24) while at least a portion of the epitaxial layer remains as monocrystalline silicon. This is achieved by applying high temperature water vapor to the epitaxial layer. The result is a silicon on insulator structure (10) useful for making a transistor (45) in which the gate dielectric (26) is on the remaining monocrystalline silicon, the gate (28) is on the gate dielectric (26), and the channel (36) is in the remaining monocrystalline silicon under the gate (28).
Inventors:
ORLOWSKI MARIUS K (US)
ADETUTU OLUMBUNMI O (US)
BARR ALEXANDER L (US)
ADETUTU OLUMBUNMI O (US)
BARR ALEXANDER L (US)
Application Number:
PCT/US2005/001534
Publication Date:
December 22, 2005
Filing Date:
January 12, 2005
Export Citation:
Assignee:
FREESCALE SEMICONDUCTOR INC (US)
ORLOWSKI MARIUS K (US)
ADETUTU OLUMBUNMI O (US)
BARR ALEXANDER L (US)
ORLOWSKI MARIUS K (US)
ADETUTU OLUMBUNMI O (US)
BARR ALEXANDER L (US)
International Classes:
H01L21/336; H01L29/786; (IPC1-7): H01L21/36; H01L21/469; H01L21/473; H01L21/4757
Foreign References:
| US6369438B1 | 2002-04-09 | |||
| US20020102775A1 | 2002-08-01 |
Download PDF:
Previous Patent: DIE ENCAPSULATION USING A POROUS CARRIER
Next Patent: SYSTEMS AND METHODS FOR CALIBRATING OSMOLARITY MEASURING DEVICES
Next Patent: SYSTEMS AND METHODS FOR CALIBRATING OSMOLARITY MEASURING DEVICES