Title:
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/088788
Kind Code:
A1
Abstract:
Embodiments of the present application provide a method for forming a semiconductor structure, and a semiconductor structure. The method for forming a semiconductor structure comprises: providing a substrate, the substrate comprising a contact region and a dummy region arranged adjacent to each other, first bit line structures arranged discretely and a first dielectric layer being formed on the substrate, the first bit line structures and the first dielectric layer enclosing to form discrete capacitive contact openings; forming a first sacrificial layer that fills the capacitive contact openings; in the dummy region, removing a portion of the height of the first bit line structures, a portion of the height of the first dielectric layer, and a portion of the height of the first sacrificial layer to form a first opening on the tops of a second bit line structure, a second dielectric layer, and a second sacrificial layer; forming, in the contact region, an insulating layer that fills the first opening, and removing the first sacrificial layer to form a second opening; and forming a capacitive contact structure in the second opening. The embodiments of the present application avoid the problem of wire short circuits of a capacitive contact pad as a critical dimension is micro-scaled.
Inventors:
CHEN LONGYANG (CN)
WU HONGFA (CN)
WU GONGYI (CN)
WU HONGFA (CN)
WU GONGYI (CN)
Application Number:
PCT/CN2021/108403
Publication Date:
May 05, 2022
Filing Date:
July 26, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/108; H01L21/8242
Foreign References:
| CN111834301A | 2020-10-27 | |||
| CN1178393A | 1998-04-08 | |||
| US20190198504A1 | 2019-06-27 |
Attorney, Agent or Firm:
BEIJING LINKAW PATENT ATTORNEY LAW FIRM (CN)
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