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Patent Searching and Data


Title:
METHOD FOR FORMING OF SILICEOUS FILM AND SILICEOUS FILM FORMED USING SAME
Document Type and Number:
WIPO Patent Application WO/2014/080841
Kind Code:
A1
Abstract:
A siliceous film having high purity and a low etching rate is formed by: (a) a step for forming a siliceous film on a substrate by coating a solution composed of a polysilazane, e.g., perhydropolysilazane on a substrate and then hardening (curing) the solution in an oxidizing atmosphere, or by coating a silica solution formed by a sol-gel method on a substrate; and (b) a step for heating the siliceous film in an inert gas environment containing a nitrogen-containing compound such as alkyalmine having a base disassociation constant (pKb) no greater than 4.5, or a halogen-containing compound in which the bond energy of a halogen atom such as F2, Br2, or NF3 is no greater than 60 kcal/mol, in order to anneal the film.

Inventors:
HAYASHI MASANOBU (JP)
NAGAHARA TATSURO (JP)
Application Number:
PCT/JP2013/080886
Publication Date:
May 30, 2014
Filing Date:
November 15, 2013
Export Citation:
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Assignee:
AZ ELECTRONIC MATERIALS MFG JAPAN KK (JP)
International Classes:
C01B33/12; H01L21/316; H01L21/768
Domestic Patent References:
WO1997024391A11997-07-10
Foreign References:
JPH09183663A1997-07-15
JP2009206440A2009-09-10
JPH01132128A1989-05-24
JP2004327793A2004-11-18
JP3178412B22001-06-18
JP2001308090A2001-11-02
JPS60145903A1985-08-01
JPS6189230A1986-05-07
JPS4969717A1974-07-05
JPS6316325B21988-04-08
Other References:
D. SEYFERTH ET AL., COMMUNICATION OF AM. CER. SOC., vol. C-13, January 1983 (1983-01-01)
D. SEYFERTH ET AL., POLYM. PREPR. AM. CHEM. SOC., DIV. POLYM. CHEM., vol. 25, 1984, pages 10
D. SEYFERTH ET AL., COMMUNICATION OF AM. CER. SOC., vol. C-132, July 1984 (1984-07-01)
See also references of EP 2924717A4
Attorney, Agent or Firm:
KANAO HIROKI (JP)
鐘尾 Hiroki (JP)
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