Title:
METHOD FOR FORMING SILICON NITRIDE FILM AND FILM FORMING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/157678
Kind Code:
A1
Abstract:
The present invention provides: a method for forming a silicon nitride film, the method being capable of burying a silicon nitride film in a recessed part; and a film forming apparatus. The present invention provides a method for forming a silicon nitride film in a recessed part that is formed in the surface of a substrate, the method comprising: a step in which the substrate is exposed to a plasma that is generated from an adsorption inhibition gas which contains at least one of a halogen gas and a non-halogen gas, thereby forming an adsorption inhibition region; a step in which a silicon-containing gas is adsorbed to regions other than the adsorption inhibition region; and a step in which the substrate, to which the silicon-containing gas has been adsorbed, is exposed to a plasma that is generated from a nitrogen-containing gas, thereby forming a silicon nitride film. In this method for forming a silicon nitride film, a cycle which comprises the step for forming the adsorption inhibition region, the step for having the silicon-containing gas adsorbed, and the step for forming the silicon nitride film is repeated; and with respect to the step for forming the adsorption inhibition region, the state changes from one in which adsorption is highly inhibited by a halogen gas to one in which adsorption is highly inhibited by a non-halogen gas as the number of cycles increases.
Inventors:
SUZUKI YUSUKE (JP)
KAGAYA MUNEHITO (JP)
OTSUKI YUJI (US)
KAGAYA MUNEHITO (JP)
OTSUKI YUJI (US)
Application Number:
PCT/JP2023/003599
Publication Date:
August 24, 2023
Filing Date:
February 03, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/318; C23C16/04; C23C16/42; H01L21/31
Foreign References:
| JP2018117038A | 2018-07-26 | |||
| JP2020025078A | 2020-02-13 | |||
| US20180166270A1 | 2018-06-14 | |||
| JP2017069407A | 2017-04-06 | |||
| JP2021034428A | 2021-03-01 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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