Title:
A METHOD OF FORMING A SILICON NITRIDE LAYER ON A SUBSTRATE
Document Type and Number:
WIPO Patent Application WO2003050853
Kind Code:
A3
Abstract:
A silicon nutride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500 DEG C, and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the radio of the NH3 gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0.15 microns wide and have a height-to-width ratio of at least 1.0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.
Inventors:
CHEN STEVEN A
TAO XIANZHI
WANG SHULIN
LUO LEE
HUANG KEGANG
AHN SANG H
TAO XIANZHI
WANG SHULIN
LUO LEE
HUANG KEGANG
AHN SANG H
Application Number:
PCT/US2002/039168
Publication Date:
November 06, 2003
Filing Date:
December 05, 2002
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
International Classes:
C23C16/34; H01L21/314; H01L21/318; (IPC1-7): H01L21/318; C23C16/34
Domestic Patent References:
| WO2001004376A1 | 2001-01-18 | |||
| WO1999053540A1 | 1999-10-21 |
Foreign References:
| US5935875A | 1999-08-10 | |||
| US20020048971A1 | 2002-04-25 | |||
| US20020081794A1 | 2002-06-27 | |||
| US5629043A | 1997-05-13 |
Other References:
KYOUNG-SOO YI ET AL: "THE EFFECTS OF DEPOSITION VARIABLES ON THE ELECTRICAL PROPERTIES OFSILICON NITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 4, no. 6, November 1986 (1986-11-01), pages 3082 - 3084, XP000809706, ISSN: 0734-2101
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