METHOD OF FORMING THICK FILM OF OXIDE SUPERCONDUCTOR

Title:

METHOD OF FORMING THICK FILM OF OXIDE SUPERCONDUCTOR

Document Type and Number:

WIPO Patent Application WO/2007/069723

Kind Code:

A1

Abstract:

A method of forming a thick film of oxide superconductor, in which with respect to a Bi2223 thick film formed on a treatment object, without lowering of Jc, the adherence to the treatment object is increased so as to attain an enlargement of the sectional area of the Bi2223 thick film. A mixture of Pb and composite oxide with Bi2212 formulation is applied to a surface of treatment object, and fired to thereby form a first thick film. On this first thick film, there is formed a thick film of oxide superconductor represented by the general formula: (Bi,Pb)2+aSr2Ca2Cu3O2 (provided that -0.1≤a≤0.5).

Inventors:

KOJIMA MASAHIRO (JP)
KAWAHARA MASAKAZU (JP)
ICHIKAWA MICHIHARU (JP)
KADO HIROYUKI (JP)

Application Number:

PCT/JP2006/325044

Publication Date:

June 21, 2007

Filing Date:

December 15, 2006

Export Citation:

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Assignee:

DOWA ELECTRONICS MATERIALS CO (JP)
CENTRAL RES INST ELECT (JP)
KOJIMA MASAHIRO (JP)
KAWAHARA MASAKAZU (JP)
ICHIKAWA MICHIHARU (JP)
KADO HIROYUKI (JP)

International Classes:

C01G29/00; C01G1/00; H01B12/06; H01B13/00

Foreign References:

JP2004182570A	2004-07-02
JP2004026625A	2004-01-29
JPH02217320A	1990-08-30
JPH02162616A	1990-06-22

Other References: