Title:
METHOD FOR FORMING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2014/081030
Kind Code:
A1
Abstract:
The objective of the present invention is to improve the deposition rate when forming an SiO2 thin film on a glass substrate by an online atmospheric pressure CVD method with respect to a plate glass in an annealing process which has come out from a float bath. The present invention provides a method for forming an SiO2 thin film on a glass substrate by an online atmospheric pressure CVD method which uses as a source gas supply means, a post mixing type source supply means of separately supplying a process gas (1) which contains monosilane (SiH4) as a main source gas and a process gas (2) which contains oxygen (O2) as an auxiliary source gas and mixing the process gases (1, 2) on the glass substrate, wherein the flow rate of the monosilane (SiH4) per unit width is 1.0 NL/min∙m or more and the process gas (1) comprises ethylene (C2H4) in an amount such that a ratio of concentration with respect to the monosilane (SiH4) (C2H4 (mol%)/SiH4 (mol%)) is 3.2 or less.
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Inventors:
SEKI ATSUSHI (JP)
NISHIDA WATARU (JP)
HIROMATSU KUNIAKI (JP)
NISHIDA WATARU (JP)
HIROMATSU KUNIAKI (JP)
Application Number:
PCT/JP2013/081673
Publication Date:
May 30, 2014
Filing Date:
November 25, 2013
Export Citation:
Assignee:
ASAHI GLASS CO LTD (JP)
International Classes:
C03C17/245; C23C16/42; C23C16/44; H01L21/316; H01L31/04
Foreign References:
| JPH10506874A | 1998-07-07 | |||
| JPH05208849A | 1993-08-20 | |||
| JPS6163545A | 1986-04-01 | |||
| JP2002509514A | 2002-03-26 | |||
| JPH02167841A | 1990-06-28 |
Attorney, Agent or Firm:
SENMYO, Kenji et al. (JP)
Spring name Kenji (JP)
Spring name Kenji (JP)
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