Title:
METHOD FOR GROWING GROUP 3B NITRIDE CRYSTAL, AND GROUP 3B NITRIDE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2010/092736
Kind Code:
A1
Abstract:
A gallium nitride crystal is grown by a method which comprises immersing a seed crystal substrate in a mixed melt containing both gallium and sodium, and then heating the mixed melt under a pressurized atmosphere which contains nitrogen gas but is free from oxygen gas to grow a gallium nitride crystal on the seed crystal substrate. In this method, the growth of a gallium nitride crystal on the seed crystal substrate is conducted first by employing, as the conditions for stirring the mixed melt, the first stirring conditions set in a manner that forms an uneven crystal-growth face; and then by employing, as the conditions for stirring the mixed melt, the second stirring conditions set in a manner that forms an even crystal-growth face.
Inventors:
SHIMODAIRA TAKANAO (JP)
HIRAO TAKAYUKI (JP)
IMAI KATSUHIRO (JP)
HIRAO TAKAYUKI (JP)
IMAI KATSUHIRO (JP)
Application Number:
PCT/JP2009/071605
Publication Date:
August 19, 2010
Filing Date:
December 25, 2009
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
SHIMODAIRA TAKANAO (JP)
HIRAO TAKAYUKI (JP)
IMAI KATSUHIRO (JP)
SHIMODAIRA TAKANAO (JP)
HIRAO TAKAYUKI (JP)
IMAI KATSUHIRO (JP)
International Classes:
C30B29/38; C30B9/00
Domestic Patent References:
| WO2004083498A1 | 2004-09-30 |
Foreign References:
| JP2007277055A | 2007-10-25 |
Other References:
YUSUKE MORI ET AL.: "Na Flux LPE-ho ni yoru Ogata Kohinshitsu GaN Kessho Ikusei Gijutsu no Genjo to Tenbo", TOYODA GOSEI TECHNICAL REVIEW, vol. 50, no. 1, 2008, pages 2 - 7
F. KAWAMURA ET AL.: "Growth of a large GaN single crystal using the liquid phase epitaxy (LPE) technique", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 42, no. 1A/B, 15 January 2003 (2003-01-15), pages L4 - L6
F. KAWAMURA ET AL.: "Growth of a large GaN single crystal using the liquid phase epitaxy (LPE) technique", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 42, no. 1A/B, 15 January 2003 (2003-01-15), pages L4 - L6
Attorney, Agent or Firm:
ITEC INTERNATIONAL PATENT FIRM (JP)
Patent business corporation Itec international patent firm (JP)
Patent business corporation Itec international patent firm (JP)
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