METHOD FOR GROWING MONOCRYSTALLINE ALUMINUM GALLIUM NITRIDE AND MELT COMPOSITION

Title:

METHOD FOR GROWING MONOCRYSTALLINE ALUMINUM GALLIUM NITRIDE AND MELT COMPOSITION

Document Type and Number:

WIPO Patent Application WO/2020/161860

Kind Code:

A1

Abstract:

Provided is a method for growing monocrystalline aluminum gallium nitride. [Solution] In this melt composition, crystalline aluminum gallium nitride is grown on seed crystal by a sodium flux method. The melt composition contains sodium metal, gallium metal, and aluminum metal. In a three-component system diagram representing the composition of sodium metal, gallium metal, and aluminum metal in units of mol%, the molar ratio (Na:Ga:Al) of sodium metal, gallium metal, and aluminum metal is present in a region enclosed by a quadrangle having vertices at four points (80:15:5), (60:30:10), (47:13:40), and (67:8:25).

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Inventors:

NIWA KOUSUKE (JP)
IWAI MAKOTO (JP)
HISHIKI TATSUYA (JP)
OGAWA HIROHISA (JP)

Application Number:

PCT/JP2019/004431

Publication Date:

August 13, 2020

Filing Date:

February 07, 2019

Export Citation:

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Assignee:

NGK INSULATORS LTD (JP)

International Classes:

C30B29/38; C30B19/02

Domestic Patent References:

WO2006030718A1

2006-03-23

Foreign References:

JP2005187317A	2005-07-14
JP2005060216A	2005-03-10
JP2014111541A	2014-06-19

Other References:

YASUI, K. ET AL.: "Growth of AlxGal-xN and InyGal-yN Single Crystals Using the Na Flux Method", PHYSICA STATUS SOLIDI (A, vol. 188, no. 1, 2001, pages 415 - 419, XP002999861