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Title:
METHOD FOR IMPROVING THERMAL CYCLE RELIABILITY OF ALUMINUM NITRIDE DIRECT-BONDED ALUMINUM PACKAGING SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2024/060342
Kind Code:
A1
Abstract:
A method for improving thermal cycle reliability of an aluminum nitride direct-bonded aluminum packaging substrate, comprising: performing surface sputtering-based copper plating on an aluminum nitride direct-bonded aluminum ceramic substrate and performing vacuum diffusion sintering; introducing a trace amount of copper element into the aluminum surface layer to form a uniform copper-aluminum solid solution hardened layer; and then performing chemical nickel plating on the surface of the aluminum nitride direct-bonded aluminum ceramic substrate to form a uniform nickel plated layer on the surface. The treated aluminum nitride direct-bonded aluminum packaging substrate has little difference in roughness before and after thermal cycles. By means of the method, stress concentration on the surface of the plated layer and cracking of the plated layer are reduced, and the thermal cycle reliability of aluminum nitride direct-bonded aluminum packaging substrates under extreme conditions is improved.

Inventors:
OU YANG PENG (CN)
HE XIANHAN (CN)
WANG BIN (CN)
WU WEI (CN)
LIU YANG (CN)
ZHANG JIN (CN)
Application Number:
PCT/CN2022/126137
Publication Date:
March 28, 2024
Filing Date:
October 19, 2022
Export Citation:
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Assignee:
JIANGSU FERROTEC SEMICONDUCTOR TECH CO LTD (CN)
International Classes:
H01L21/48; C23C10/28; C23C14/18; C23C14/34; C23C14/58; C23C18/16; C23C18/31; C23C18/32; C23C18/36; C23C18/38; C23C28/02; H01L23/498
Foreign References:
CN111364030A2020-07-03
CN108265281A2018-07-10
CN112752414A2021-05-04
CN105937026A2016-09-14
JPH01301866A1989-12-06
KR20050014186A2005-02-07
Attorney, Agent or Firm:
BEIJING HUAJI INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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