Title:
METHOD FOR INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD FOR PRODUCING GROUP-III ELEMENT NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2024/042777
Kind Code:
A1
Abstract:
Provided is a group-III element nitride substrate that is capable of having an improved yield. A method for inspecting a group-III element nitride substrate according to an embodiment of the present invention comprises: preparing a group-III element nitride substrate that is doped with an element other than group-III elements; irradiating the group-III element nitride substrate with excitation energy; and measuring the full width at half maximum of the band edge emission in an emission spectrum obtained by the irradiation.
Inventors:
KURAOKA YOSHITAKA (JP)
NONAKA KENTARO (JP)
NONAKA KENTARO (JP)
Application Number:
PCT/JP2023/016089
Publication Date:
February 29, 2024
Filing Date:
April 24, 2023
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
H01L21/66; C30B29/38; H01L21/20; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| WO2022039198A1 | 2022-02-24 |
Foreign References:
| JP2006339605A | 2006-12-14 | |||
| JP2015040169A | 2015-03-02 |
Attorney, Agent or Firm:
MOMII Takafumi (JP)
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