METHOD OF MAKING HCD GAS HARMLESS AND APPARATUS THEREFOR

Title:

METHOD OF MAKING HCD GAS HARMLESS AND APPARATUS THEREFOR

Document Type and Number:

WIPO Patent Application WO/2007/102288

Kind Code:

A1

Abstract:

A discharge gas (L) containing hexachlorodisilicon is introduced into a reaction treatment region (K) without moistening the gas. An oxygenous gas (G) containing a slight amount of water is supplied to the reaction treatment region (K) which is kept at a decomposition temperature of hexachlorodisilicon to thereby decompose the hexachlorodisilicon into hydrochloric acid, silicon dioxide, and water. Thus, the treatment of the discharge gas containing hexachlorodisilicon is safely conducted without generating silicoxalic acid or chlorine.

Inventors:

IMAMURA HIROSHI (JP)
TAKEUCHI HIROAKI (JP)
ISHIKAWA KOJI (JP)
SUZUKI HIROSHI (JP)
MORIYA AKIRA (JP)
HARADA KATSUYOSHI (JP)

Application Number:

PCT/JP2007/051964

Publication Date:

September 13, 2007

Filing Date:

February 06, 2007

Export Citation:

Click for automatic bibliography generation Help

Assignee:

KANKEN TECHNO CO LTD (JP)
TOAGOSEI CO LTD (JP)
IMAMURA HIROSHI (JP)
TAKEUCHI HIROAKI (JP)
ISHIKAWA KOJI (JP)
SUZUKI HIROSHI (JP)
MORIYA AKIRA (JP)
HARADA KATSUYOSHI (JP)

International Classes:

B01D53/77; B01D53/68; C23C16/44; F23G7/06

Foreign References:

JP2002166128A	2002-06-11
JP2005199215A	2005-07-28
JP2005152858A	2005-06-16
JPS62158321A	1987-07-14
JPH1133345A	1999-02-09

Other References: