Title:
METHOD OF MAKING AN INTEGRATED CIRCUIT USING A PHOTOMASK HAVING A DUAL ANTIREFLECTIVE COATING
Document Type and Number:
WIPO Patent Application WO2004032204
Kind Code:
A3
Abstract:
A wafer (18) is made using a mask (14) that has a quartz substrate (15) and a patterned stack (32) for providing a mask pattern. The patterned stack comprises an opaque layer (36) between two ARC layers (34, 38). The patterned stack reduces flare, which in turn improves critical dimension (CD) control. The stack reduces the reflections that come from the interface between the opaque layer (36) and quartz substrate (15). This stack also absorbs the reflections that come back from the direction of the wafer. The opaque layer (36) is silicon, which is opaque at wavelengths below 300 nanometers, and the ARC layers are non-stoichiometric silicon nitride.
More Like This:
Inventors:
WU WEI E
POSTNIKOV SERGEI V
POSTNIKOV SERGEI V
Application Number:
PCT/US2003/022849
Publication Date:
August 12, 2004
Filing Date:
July 22, 2003
Export Citation:
Assignee:
MOTOROLA INC (US)
International Classes:
G03F1/00; G03F1/46; G03F1/54; (IPC1-7): B01J20/32; G01N30/04
Foreign References:
| EP1039347A1 | 2000-09-27 |
Other References:
PATENT ABSTRACTS OF JAPAN vol. 018, no. 362 (P - 1766) 7 July 1994 (1994-07-07)
PATENT ABSTRACTS OF JAPAN vol. 017, no. 020 (P - 1469) 14 January 1993 (1993-01-14)
ASINOVSKY L ET AL: "Characterization of the optical properties of PECVD SiNx films using ellipsometry and reflectometry", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 313-314, 13 February 1998 (1998-02-13), pages 198 - 204, XP004132983, ISSN: 0040-6090
PATENT ABSTRACTS OF JAPAN vol. 017, no. 020 (P - 1469) 14 January 1993 (1993-01-14)
ASINOVSKY L ET AL: "Characterization of the optical properties of PECVD SiNx films using ellipsometry and reflectometry", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 313-314, 13 February 1998 (1998-02-13), pages 198 - 204, XP004132983, ISSN: 0040-6090
Download PDF: