Title:
METHOD FOR MANUFACTURING BONDED WAFER AND BONDED WAFER
Document Type and Number:
WIPO Patent Application WO/2021/192938
Kind Code:
A1
Abstract:
The present invention is a method for manufacturing a bonded wafer in which a compound semiconductor wafer which is obtained by a compound semiconductor being epitaxially grown on a growth substrate is bonded to a wafer to be bonded, the method being characterized in that the area of a bonding surface of the wafer to be bonded is greater than the area of a bonding surface of the compound semiconductor wafer, and the growth substrate is removed after the compound semiconductor wafer is bonded to the wafer to be bonded. Thus, a method for manufacturing a bonded wafer is provided in which generation of cracks is suppressed.
Inventors:
ISHIZAKI JUNYA (JP)
FURUYA SHOGO (JP)
FURUYA SHOGO (JP)
Application Number:
PCT/JP2021/008849
Publication Date:
September 30, 2021
Filing Date:
March 08, 2021
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/02
Foreign References:
| JP2004296796A | 2004-10-21 | |||
| US9762032B1 | 2017-09-12 | |||
| JP2015533774A | 2015-11-26 | |||
| JP2010114112A | 2010-05-20 | |||
| US6213977B1 | 2001-04-10 |
Other References:
See also references of EP 4131335A4
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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