METHOD FOR MANUFACTURING CMOS-TYPE LTPS TFT SUBSTRATE

WIPO Patent Application WO/2019/200835

A1

Provided in the present invention is a method for manufacturing a CMOS-type LTPS TFT substrate. The method comprises: forming, by means of a semi-transmissive mask, a second photoresist section of a second photoresist pattern over a region, in which P-type ion heavy doping is required, of a second polysilicon active layer as a protective layer, wherein when a first polysilicon active layer is subjected to N-type ion heavy doping, N-type ions can be effectively blocked from being implanted in a second source-drain contact region of the second polysilicon active layer. Compared with the prior art, when the second polysilicon active layer is subsequently subjected to P-type ion heavy doping to form a second source-drain contact region, the capacity loss of a P-type ion heavy doping process is reduced without additionally compensating P-type ions, and the convergence of the electrical properties of a PMOS transistor is improved since a N-type ion heavy doping process cannot affect the PMOS transistor; moreover, since the number of times ion implantation is performed on the second polysilicon active layer is reduced, damage to a thin film lattice structure by ion implantation is reduced, and the stability of a device is improved.

LI LISHENG (CN)
LIU GUANGHUI (CN)

PCT/CN2018/106332

October 24, 2019

September 18, 2018

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WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)

H01L27/12; H01L21/77

CN104167390A	2014-11-26
CN108511464A	2018-09-07
US7064021B2	2006-06-20
US6846707B2	2005-01-25

COMIPS INTELLECTUAL PROPERTY OFFICE (CN)

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