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Title:
METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR TEMPLATE AND SEMICONDUCTOR TEMPLATE MANUFACTURED THEREBY
Document Type and Number:
WIPO Patent Application WO/2024/043675
Kind Code:
A1
Abstract:
The present invention relates to: a method for manufacturing a group III nitride semiconductor template, by which a high-quality group III nitride semiconductor layer can be formed on the top of a high heat dissipation support substrate having a lattice constant and thermal expansion coefficient equal or similar to those of the group III nitride semiconductor layer, by using a laser lift off (LLO) technique; and a semiconductor template manufactured thereby.

Inventors:
SONG JUNEO (KR)
YUN HYEONG SEON (KR)
HAN YOUNG HUN (KR)
MOON JI HYUNG (KR)
Application Number:
PCT/KR2023/012452
Publication Date:
February 29, 2024
Filing Date:
August 23, 2023
Export Citation:
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Assignee:
WAVELORD CO LTD (KR)
International Classes:
H01L21/02
Foreign References:
KR20210112878A2021-09-15
JP2009049395A2009-03-05
KR20110107618A2011-10-04
KR20090008401A2009-01-21
JP2019153603A2019-09-12
Attorney, Agent or Firm:
PARK, Kil Hwan et al. (KR)
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