Title:
METHOD FOR MANUFACTURING HIGH-QUALITY, LOW-COST, FREE-STANDING GAN SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/214590
Kind Code:
A1
Abstract:
The present invention provides a method for manufacturing a free-standing GaN substrate by free-standing GaN substrate production using a HVPE method, said free-standing GaN substrate having better crystal quality, better productivity, a lower cost, and being capable of being made larger in diameter than conventional substrates. According to this method for manufacturing a high-quality, low-cost free-standing GaN substrate, a GaN template is produced in which a GaN thin film is grown directly without a buffer layer on a ScAlMg4 (SAM) substrate using an MBE device, the GaN is grown thereupon at a temperature of 1000°C or more by an HVPE device, and spontaneously peels off at the time of cooling, whereby the free-standing GaN substrate is manufactured.
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Inventors:
FUKUDA TSUGUO (JP)
SHIRAISHI YUJI (JP)
NANTO TOKI (JP)
ANDO HITROTAKA (JP)
KUMAGAI TAKESHI (JP)
TAKAHASHI KAZUYA (JP)
ARAKI TSUTOMU (JP)
FUJII TAKASHI (JP)
DEURA MOMOKO (JP)
TADATOMO KAZUYUKI (JP)
IMOTO RYO (JP)
HOSSHO SHINICHI (JP)
SAITO KENJI (JP)
SHIRAISHI YUJI (JP)
NANTO TOKI (JP)
ANDO HITROTAKA (JP)
KUMAGAI TAKESHI (JP)
TAKAHASHI KAZUYA (JP)
ARAKI TSUTOMU (JP)
FUJII TAKASHI (JP)
DEURA MOMOKO (JP)
TADATOMO KAZUYUKI (JP)
IMOTO RYO (JP)
HOSSHO SHINICHI (JP)
SAITO KENJI (JP)
Application Number:
PCT/JP2023/017245
Publication Date:
November 09, 2023
Filing Date:
May 08, 2023
Export Citation:
Assignee:
FUKUDA CRYSTAL LABORATORY (JP)
International Classes:
H01L21/205; H01L21/20
Domestic Patent References:
| WO2021020539A1 | 2021-02-04 | |||
| WO2021244188A1 | 2021-12-09 | |||
| WO2023037896A1 | 2023-03-16 |
Foreign References:
| JP2020097510A | 2020-06-25 | |||
| JP2020125217A | 2020-08-20 | |||
| JP2017119597A | 2017-07-06 | |||
| JP2018197179A | 2018-12-13 | |||
| JPH11354844A | 1999-12-24 | |||
| JP2009536139A | 2009-10-08 | |||
| JP2023096845A | 2023-07-07 |
Other References:
OZAKI TAKUYA, FUNATO MITSURU, KAWAKAMI YOICHI: "15p-A21-4. Composition pulling effect near lattice-matching condition in InGaN films grown on ScAlMgO4(0001) substrates", 77TH JAPAN SOCIETY OF APPLIED PHYSICS AUTUMN ACADEMIC CONFERENCE PROCEEDINGS (2016 TOKI MESSE (NIIGATA CITY, NIIGATA PREFECTURE)), 1 January 2016 (2016-01-01), XP093106201
KAYAMOTO SEIYA, FUJII TAKASHI, FUKUDA TSUGUO, SUGIE RYUICHI, MOURI SHINICHIRO, ARAKI TSUTOMU, HELLMAN S, BRANDLE C D, HARTFORD JR : "Growth of GaN Film on ScAlMgO4 Substrate by RF-MBE Ⅱ", THE JAPAN SOCIETY OF APPLIED PHYSICS ANNUAL CONFERENCE LECTURE PROCEEDINGS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 395, no. 51, 1 January 2020 (2020-01-01), JP, pages 1 - 1, XP093046200, ISSN: 2436-7613, DOI: 10.11470/jsapmeeting.2020.2.0_2085
KAYAMOTO SEIYA, FUJII TAKASHI, FUKUDA TSUGUO, SUGIE RYUICHI, MOURI SHINICHIRO, ARAKI TSUTOMU, HELLMAN S, BRANDLE C D, HARTFORD JR : "Growth of GaN Film on ScAlMgO4 Substrate by RF-MBE Ⅱ", THE JAPAN SOCIETY OF APPLIED PHYSICS ANNUAL CONFERENCE LECTURE PROCEEDINGS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 395, no. 51, 1 January 2020 (2020-01-01), JP, pages 1 - 1, XP093046200, ISSN: 2436-7613, DOI: 10.11470/jsapmeeting.2020.2.0_2085
Attorney, Agent or Firm:
FUKUMORI, Hisao (JP)
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