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Title:
METHOD FOR MANUFACTURING LARGE-AREA METAL CHALCOGENIDE THIN FILM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE COMPRISING METAL CHALCOGENIDE THIN FILM MANUFACTURED THEREBY
Document Type and Number:
WIPO Patent Application WO/2018/143611
Kind Code:
A1
Abstract:
The present invention relates to a method for manufacturing a large-area metal chalcogenide thin film and a device comprising the large-area metal chalcogenide thin film manufactured thereby, the method comprising the steps of: preparing a polymer-precursor solution; coating a substrate with the polymer-precursor solution; and heat-treating the substrate coated with the polymer-precursor solution. A high-quality, large-area metal chalcogenide thin film having a uniform thickness and composition can be manufactured at low cost according to the manufacturing method of the present invention.

Inventors:
JEONG UNYONG (KR)
GIRI ANUPAM (KR)
YANG HEESEUNG (KR)
Application Number:
PCT/KR2018/001166
Publication Date:
August 09, 2018
Filing Date:
January 26, 2018
Export Citation:
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Assignee:
POSTECH ACAD IND FOUND (KR)
International Classes:
B05D7/24; B05D3/02; B05D3/14; C23C18/04; C23C18/12; H01L45/00
Domestic Patent References:
WO2008143922A12008-11-27
Foreign References:
KR101532883B12015-07-02
KR20160149577A2016-12-28
KR20060016109A2006-02-21
Other References:
ERK: "Polymer-assisted preparation of nanoscale films of thermoelectric PbSe and PbTe and of lead chalcogenide-polymer composite films", DALTON TRANSACTIONS, vol. 39, 2010, pages 11248 - 11254, XP055532140
Attorney, Agent or Firm:
LEE, Soo Yeol (KR)
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