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Title:
METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT MAGNETIC HEAD
Document Type and Number:
WIPO Patent Application WO/2002/043164
Kind Code:
A1
Abstract:
An MR device manufacturing method comprising a film-forming step of forming a multilayer film including an antiferromagnetic layer (4), a fixing layer (3), and a spacer layer (5), a first patterning step of patterning the multilayer film to a predetermined pattern, a step of burying an insulating layer (13) around the patterned multilayer film, a step of forming a magnetic flux guide layer or a free layer-cum-magnetic flux guide layer over the insulating layer (13) and the patterned multilayer film, and a second patterning step of patterning the magnetic flux guide layer and the multilayer film simultaneously by beam etching so as to from a multilayer structure, wherein the incident angle $g(u) of the etching beam with respect to the normal to the etching face is limited to 10 ° ≤ $g(u) ≤ 40 °, preferably, to 15 ° ≤ $g(u) ≤ 35 °, and the etching rate of the constituent material of the multilayer structure is substantially equal to that of the insulating layer so as to accurately etch the parts without over- and under-etching, thereby stabilizing the characteristics and improving the production yield.

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Inventors:
ISHII SATORU (JP)
SASAKI SATOSHI (JP)
Application Number:
PCT/JP2001/010210
Publication Date:
May 30, 2002
Filing Date:
November 22, 2001
Export Citation:
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Assignee:
SONY CORP (JP)
ISHII SATORU (JP)
SASAKI SATOSHI (JP)
International Classes:
G01R33/09; G11B5/39; H01F10/16; H01F10/26; H01F10/32; H01F41/30; H01L43/08; H01L43/12; G11B5/31; (IPC1-7): H01L43/08; H01L43/12; G11B5/39; G01R33/09; H01F10/32
Domestic Patent References:
WO1997044781A11997-11-27
Foreign References:
JPH10275310A1998-10-13
JPH10163545A1998-06-19
JPH10321929A1998-12-04
JP2001102658A2001-04-13
JPH11232618A1999-08-27
Attorney, Agent or Firm:
Matsukuma, Hidemori (Nishishinjuku 1-chome Shinjuku-ku, Tokyo, JP)
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