Title:
METHOD FOR MANUFACTURING METAL-OXIDE-SEMICONDUCT OR FIELD-EFFECT TRANSISTORS
Document Type and Number:
WIPO Patent Application WO/2012/071990
Kind Code:
A1
Abstract:
A method is disclosed for manufacturing a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The method includes providing a substrate containing an epitaxial layer, forming a gate oxide layer and a polysilicon layer on the epitaxial layer, and forming a photoresist layer on the polysilicon layer and a gate region pattern in the photoresist layer. The method also includes forming a gate region by etching the polysilicon layer using the gate region pattern in the photoresist layer as a mask. The etching is performed in such a way that the gate region has a lateral surface receding at a predetermined length relative to the gate region pattern in the photoresist layer. Further, the method includes forming a body region by ion implantation and dopant drive-in using the photoresist layer as a mask such that an overlapping area between the body region and the gate region can be reduced based on the predetermined receding length.
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Inventors:
ALIYEU ALIHAJY (CN)
Application Number:
PCT/CN2011/082419
Publication Date:
June 07, 2012
Filing Date:
November 18, 2011
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (CN)
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
ALIYEU ALIHAJY (CN)
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
ALIYEU ALIHAJY (CN)
International Classes:
H01L21/336
Foreign References:
| CN101236904A | 2008-08-06 | |||
| US6849530B2 | 2005-02-01 | |||
| JPH06275635A | 1994-09-30 | |||
| CN100533692C | 2009-08-26 |
Attorney, Agent or Firm:
ADVANCE CHINA I.P. LAW OFFICE (Dongshan PlazaNo. 69 Xianlie Central Roa, Guangzhou Guangdong 5, CN)
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