Title:
METHOD FOR MANUFACTURING NITRIDE LIGHT EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2016/058369
Kind Code:
A1
Abstract:
A method for manufacturing a nitride light emitting diode. A PVD method is used to deposit an AlN film layer (2) on a patterned substrate (1) having a larger depth; a CVD method is used to deposit a nitride epitaxial layer (3) having a small thickness on the AlN film layer; and a doped active layer (4) and a p-type layer (5) are formed on the nitride epitaxial layer. The thickness of an epitaxial layer is decreased to reduce stress so as to improve warping of an epitaxial wafer, and then improve electrical property uniformity of a single epitaxial wafer; a patterned substrate having a large depth is used to improve light extraction efficiency; and a high-concentration impurity is doped in an active layer, so that voltage characteristics can be effectively reduced without affecting current leakage, so as to improve overall yield of the light emitting diode.
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Inventors:
HSIEH HSIANG-LIN (CN)
XU ZHIBO (CN)
LEE CHENG-HUNG (CN)
LIN CHAN-CHAN (CN)
CHUO CHANG-CHENG (CN)
CHANG CHIA-HUNG (CN)
XU ZHIBO (CN)
LEE CHENG-HUNG (CN)
LIN CHAN-CHAN (CN)
CHUO CHANG-CHENG (CN)
CHANG CHIA-HUNG (CN)
Application Number:
PCT/CN2015/078638
Publication Date:
April 21, 2016
Filing Date:
May 11, 2015
Export Citation:
Assignee:
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L33/00
Foreign References:
| CN104505441A | 2015-04-08 | |||
| CN103956418A | 2014-07-30 | |||
| CN102364706A | 2012-02-29 | |||
| CN103700579A | 2014-04-02 | |||
| CN104037293A | 2014-09-10 | |||
| JP2006128527A | 2006-05-18 |
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