Title:
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/149599
Kind Code:
A1
Abstract:
This method for manufacturing a nitride semiconductor device comprises: a second step for forming, on a gate layer material film, a gate electrode film that is a material film of a gate electrode; a third step for forming a ridge-shaped gate electrode 22 by selectively etching the gate electrode film; and a fourth step for forming a ridge-shaped semiconductor gate layer 21, in which the gate electrode 22 is arranged and formed in an intermediate portion of the width of the surface thereof, by selectively etching the gate layer material film. The third step includes: a first etching step for forming a first part 22A ranging from an upper end to a predetermined portion of the gate electrode 22 in the thickness direction; and a second etching step for forming a remaining second part 22B of the gate electrode, the second etching step having etching conditions different from those of the first etching step.
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Inventors:
OTAKE HIROTAKA (JP)
CHIKAMATSU KENTARO (JP)
CHIKAMATSU KENTARO (JP)
Application Number:
PCT/JP2021/001163
Publication Date:
July 29, 2021
Filing Date:
January 15, 2021
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/337; H01L21/28; H01L21/3065; H01L21/338; H01L29/417; H01L29/423; H01L29/778; H01L29/808; H01L29/812
Domestic Patent References:
| WO2017051530A1 | 2017-03-30 |
Foreign References:
| JP2017073506A | 2017-04-13 | |||
| JP2016529711A | 2016-09-23 | |||
| JP2015073002A | 2015-04-16 | |||
| US10283614B1 | 2019-05-07 | |||
| JPH05315368A | 1993-11-26 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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