Title:
METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2018/188131
Kind Code:
A1
Abstract:
A method for manufacturing an organic thin film transistor, comprising: forming a graphene layer (12) on the surface of a metal substrate (10); covering the surface of the graphene layer with an organic solution, and heating the graphene layer (12) so as to form organic semiconductor nanowires (14) on the surface of the graphene layer (12); and transferring the organic semiconductor nanowires (14) to a target substrate (20). The graphene layer (12) is formed on the surface of the metal substrate (10) in a large scale; the organic semiconductor nanowires (single crystal semiconductors) (14) are grown in a large scale by using the graphene layer (12) as a substrate; the organic semiconductor nanowires (14) are transferred to the target substrate (20) to form an organic semiconductor layer of the organic thin film transistor; and massive organic semiconductor nanowires (14) can be formed on the surface of the large-area metal substrate (10) in one time, so that the organic semiconductor nanowires (14) of the metal substrate (10) can be rapidly transferred to the target substrate (20) in a large scale and with high quality, thereby lowering time consumption during the manufacturing process, satisfying the large-scale production requirements, increasing the yield of display devices, and lowering the production cost.
Inventors:
LIANG BO (CN)
WANG WEI (CN)
WANG WEI (CN)
Application Number:
PCT/CN2017/082630
Publication Date:
October 18, 2018
Filing Date:
April 28, 2017
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L51/40
Foreign References:
| CN105304729A | 2016-02-03 | |||
| CN103345963A | 2013-10-09 | |||
| CN104701455A | 2015-06-10 | |||
| CN205069659U | 2016-03-02 | |||
| CN105551909A | 2016-05-04 | |||
| US20110244661A1 | 2011-10-06 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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