Title:
METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/210438
Kind Code:
A1
Abstract:
This method for manufacturing a piezoelectric element includes: an angle adjustment layer formation step for forming an angle adjustment layer containing an amorphous oxide on one main surface side of a flexible base material by sputtering an amorphous material containing Zn in a mixed-gas atmosphere that contains an inert gas and oxygen; and, a piezoelectric layer formation step for forming a piezoelectric layer on the angle adjustment layer using a roll-to-roll method. The angle adjustment layer formation step is such that the ratio of the flow rate of the oxygen to the total flow rate of the inert gas and the oxygen exceeds 1%.
Inventors:
WATANABE MASAHIKO (JP)
TSUBURAOKA GAKU (JP)
ISHIKAWA TAKETO (JP)
NAKAMURA DAISUKE (JP)
MACHINAGA HIRONOBU (JP)
TSUBURAOKA GAKU (JP)
ISHIKAWA TAKETO (JP)
NAKAMURA DAISUKE (JP)
MACHINAGA HIRONOBU (JP)
Application Number:
PCT/JP2022/014719
Publication Date:
October 06, 2022
Filing Date:
March 25, 2022
Export Citation:
Assignee:
NITTO DENKO CORP (JP)
International Classes:
H01L41/09; C23C14/08; C23C14/34; C23C14/56; H01L41/113; H01L41/187; H01L41/316; H01L41/319
Domestic Patent References:
| WO2020049880A1 | 2020-03-12 | |||
| WO2020067330A1 | 2020-04-02 | |||
| WO2004101842A1 | 2004-11-25 | |||
| WO2020066930A1 | 2020-04-02 |
Foreign References:
| JP2005351664A | 2005-12-22 | |||
| JP2020088281A | 2020-06-04 | |||
| JP2013004707A | 2013-01-07 |
Other References:
YING MINJU, SAEEDI AHMAD M. A., YUAN MIAOMIAO, ZHANG XIA, LIAO BIN, ZHANG XU, MEI ZENGXIA, DU XIAOLONG, HEALD STEVE M., FOX A. MAR: "Extremely large d 0 magnetism in krypton implanted polar ZnO films", JOURNAL OF MATERIALS CHEMISTRY C, ROYAL SOCIETY OF CHEMISTRY, GB, vol. 7, no. 5, 31 January 2019 (2019-01-31), GB , pages 1138 - 1145, XP055972965, ISSN: 2050-7526, DOI: 10.1039/C8TC05929B
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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