Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/128908
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor device, the semiconductor device and an electronic device. The method comprises: step S1: providing a semiconductor substrate, and forming a floating gate structure on the semiconductor substrate, the floating gate structure comprising a floating gate layer, and the floating gate structure having a spacer region exposing a part of the semiconductor substrate; step S2: forming a dielectric layer on the surface of the semiconductor substrate, wherein the dielectric layer covers the semiconductor substrate and the sidewall of the floating gate layer; step S3: depositing a control gate material layer on the surface of the semiconductor substrate to cover the dielectric layer and the floating gate structure; and step S4: patterning the control gate material layer to form a control gate structure, the control gate structure partially covering the dielectric layer on the sidewall of the floating gate layer.
Inventors:
ZHANG SONG (CN)
LIANG ZHIBIN (CN)
LI XIAOHONG (CN)
JIN YAN (CN)
WANG DEJIN (CN)
LIANG ZHIBIN (CN)
LI XIAOHONG (CN)
JIN YAN (CN)
WANG DEJIN (CN)
Application Number:
PCT/CN2020/111336
Publication Date:
July 01, 2021
Filing Date:
August 26, 2020
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L27/115
Foreign References:
| CN102569425A | 2012-07-11 | |||
| US20040207004A1 | 2004-10-21 | |||
| US20160218112A1 | 2016-07-28 | |||
| CN106469728A | 2017-03-01 | |||
| CN109427785A | 2019-03-05 | |||
| CN110459536A | 2019-11-15 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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