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Patent Searching and Data


Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2004/047165
Kind Code:
A1
Abstract:
In a method of manufacturing a semiconductor device by dividing a semiconductor wafer (6), on which a plurality of semiconductor elements are formed, into individual pieces of the semiconductor elements, protected by layer (30), after thickness of a reverse face of a circuit formation face (6a) is reduced mechanically, a mask to determine cutting lines (31b) is formed by a resist film (31a), and the semiconductor wafer (6) is divided into individual pieces of semiconductor elements (6c) by conducting plasma etching on portions of the cutting lines (31b) when plasma is exposed from the mask side, and then the resist film (31a) is removed by plasma, and further a micro-crack layer (6b) generated on the thinned face is removed by plasma etching. All steps of the above plasma processing are executed by the same plasma processing apparatus.

Inventors:
ARITA KIYOSHI
Application Number:
PCT/JP2003/014845
Publication Date:
June 03, 2004
Filing Date:
November 20, 2003
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
International Classes:
H01L21/00; H01L21/301; H01L21/3065; H01L21/311; H01L21/68; H01L21/683; H01L21/78; (IPC1-7): H01L21/78; H01L21/68
Foreign References:
US6239036B12001-05-29
US5888882A1999-03-30
US4325182A1982-04-20
US20020061642A12002-05-23
US5693182A1997-12-02
US5275958A1994-01-04
Attorney, Agent or Firm:
Oguri, Shohei (ARK Mori Building 28th Floor, 12-32, Akasaka 1-chom, Minato-ku Tokyo, JP)
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