Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR SELECTING ADHESIVE LAYER, AND DICING DIE BONDING INTEGRATED FILM AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/048986
Kind Code:
A1
Abstract:
The method for manufacturing a semiconductor device according to the present invention comprises (A) a step for preparing a dicing die bonding integrated film which includes, in order, a substrate layer, a tackifier layer, and an adhesive layer, (B) a step for irradiating the integrated film with actinic energy rays, (C) a step for affixing a wafer to the adhesive layer, (D) a step for obtaining a plurality of chips with adhesive pieces by fragmenting the wafer and the adhesive layer, (E) a step for picking up the chips with adhesive pieces from the tackifier layer, and (F) a step for mounting the chips with adhesive pieces on a substrate or other chips, wherein the adhesive layer contains 75 mass% or more of metal particles based on the total mass of the adhesive layer.
Inventors:
KOSEKI YUTA (JP)
NAKAMURA YUKI (JP)
YAMANAKA DAISUKE (JP)
YAHATA TATSUYA (JP)
NAKAMURA YUKI (JP)
YAMANAKA DAISUKE (JP)
YAHATA TATSUYA (JP)
Application Number:
PCT/JP2019/035973
Publication Date:
March 18, 2021
Filing Date:
September 12, 2019
Export Citation:
Assignee:
SHOWA DENKO MATERIALS CO LTD (JP)
International Classes:
H01L21/52
Foreign References:
| JP2016103524A | 2016-06-02 | |||
| JP2008218571A | 2008-09-18 | |||
| JP2005033170A | 2005-02-03 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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