Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2023/181242
Kind Code:
A1
Abstract:
The present invention can improve the step coverage performance of a film formed on a substrate having a recess. This method for manufacturing a semiconductor device comprises: (a) a step for supplying, into a recess in a substrate provided with an adsorption site on a surface thereof, a feedstock gas at a speed faster than the adsorption speed at which a precursor of the feedstock gas is adsorbed onto the adsorption site; (b) a step for supplying a purge gas into the recess; and (c) a step for supplying the feedstock gas into the recess at a speed slower than the aforementioned adsorption speed.
Inventors:
HATTA HIROKI (JP)
TAKEBAYASHI YUJI (JP)
TANAKA SHOTA (JP)
NAGAHASHI TOMOYA (JP)
OKAJIMA YUSAKU (JP)
TAKEBAYASHI YUJI (JP)
TANAKA SHOTA (JP)
NAGAHASHI TOMOYA (JP)
OKAJIMA YUSAKU (JP)
Application Number:
PCT/JP2022/013892
Publication Date:
September 28, 2023
Filing Date:
March 24, 2022
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; H01L21/318
Foreign References:
| JP2021150471A | 2021-09-27 | |||
| JP2017201653A | 2017-11-09 | |||
| JP2017139451A | 2017-08-10 | |||
| JP2017183509A | 2017-10-05 | |||
| JP2010028095A | 2010-02-04 | |||
| JP2012184481A | 2012-09-27 | |||
| JP2018101687A | 2018-06-28 | |||
| JP2022052622A | 2022-04-04 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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