Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/070855
Kind Code:
A1
Abstract:
Disclosed is a method of selectively transferring elements, such as a device composed of a single crystal Si thin film or single crystal Si, from a base substrate (100) to an insulating substrate without using an intermediate substrate. A laser beam having a multiphoton absorption wavelength is selectively applied to the base substrate (first substrate) (100) having the elements formed thereon, and with some elements to be transferred, thin films on the base substrate (100), said thin films corresponding to the elements to be transferred, are transferred to a substrate to which the elements are to be transferred (second substrate) (200).
Inventors:
MITANI MASAHIRO
Application Number:
PCT/JP2010/068291
Publication Date:
June 16, 2011
Filing Date:
October 18, 2010
Export Citation:
Assignee:
SHARP KK (JP)
MITANI MASAHIRO
MITANI MASAHIRO
International Classes:
H01L21/02; H01L21/336; H01L27/12; H01L29/786
Foreign References:
JP2009064831A | 2009-03-26 | |||
JP2006041430A | 2006-02-09 | |||
JPH11142878A | 1999-05-28 | |||
JP2006032435A | 2006-02-02 | |||
JP2006053171A | 2006-02-23 | |||
JP3447619B2 | 2003-09-16 | |||
JP3994681B2 | 2007-10-24 | |||
JPH0348201B2 | 1991-07-23 | |||
JP3408805B2 | 2003-05-19 | |||
JP3406207B2 | 2003-05-12 | |||
JP3474187B1 | 2003-12-08 |
Other References:
"The Stealth Dicing Technologies and Their Applications", TLAS9004J01, March 2005 (2005-03-01)
"Stealth Dicing Technical Information for Mems", TLAS9005J02, May 2009 (2009-05-01)
"Stealth Dicing Technical Information for Mems", TLAS9005J02, May 2009 (2009-05-01)
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
Patent business corporation Hara [Kenzo] international patent firm (JP)
Patent business corporation Hara [Kenzo] international patent firm (JP)
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