METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2011/074075

Kind Code:

A1

Abstract:

Provided is a method for manufacturing a semiconductor device, wherein the misalignment between the relative positions of a range in which impurity ions are implanted and a range in which charged particles are injected can be suppressed. Specifically provided is a method for manufacturing a semiconductor device, said method comprising: an impurity ion implantation step for applying impurity ions while a mask is disposed between an impurity ion application device and a semiconductor substrate; and a charged particle injection step for forming a low lifetime region by applying charged particles while a mask is disposed between a charged particle application device and the semiconductor substrate. The relative positions of the mask and the semiconductor substrate are not changed from the start of either the impurity ion implantation step or the charged particle injection step until the completion of both the impurity ion implantation step and the charged particle injection step.

Inventors:

IWASAKI SHINYA (JP)
KAMEI AKIRA (JP)

Application Number:

PCT/JP2009/070911

Publication Date:

June 23, 2011

Filing Date:

December 15, 2009

Export Citation:

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Assignee:

TOYOTA MOTOR CO LTD (JP)
IWASAKI SHINYA (JP)
KAMEI AKIRA (JP)

International Classes:

H01L21/336; H01L21/266; H01L21/76; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/739; H01L29/78

Foreign References:

JPH08227895A	1996-09-03
JPH02126682A	1990-05-15
JP2007103770A	2007-04-19
JP2008004866A	2008-01-10
JP2005057235A	2005-03-03
JPH10321877A	1998-12-04
JPH07135214A	1995-05-23
JPH04214674A	1992-08-05
JP2008192737A	2008-08-21

Other References: