Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2016/031312
Kind Code:
A1
Abstract:
A metal film that contains one or more metals selected from the group consisting of titanium, tungsten, molybdenum, and chromium is formed on a first surface of a substrate that comprises silicon carbide. By exposing said metal film to a pulsed laser beam having a wavelength within the 330-370 nm range, a silicide reaction is caused at the interface between the substrate and the metal film, forming a metal-silicide film. The metal film is at least 30 nm thick, the pulse width of the pulsed laser beam is in the 20-200 ns range, and the radiant exposure is selected so as to satisfy the conditions that the maximum temperature that the surface of the metal film reaches does not exceed the melting point of the metal film but the maximum temperature that the interface between the metal film and the substrate reaches is greater than or equal to the silicide reaction temperature of the metal film. This method makes it possible to form a metal-silicide film without melting a metal film formed on a SiC substrate.
Inventors:
WAKABAYASHI NAOKI (JP)
KAWASAKI TERUHISA (JP)
KAWASAKI TERUHISA (JP)
Application Number:
PCT/JP2015/064146
Publication Date:
March 03, 2016
Filing Date:
May 18, 2015
Export Citation:
Assignee:
SUMITOMO HEAVY INDUSTRIES (JP)
International Classes:
H01L21/28; H01L21/268; H01L21/329; H01L29/06; H01L29/47; H01L29/872
Foreign References:
| JP2014123589A | 2014-07-03 | |||
| JP2014116365A | 2014-06-26 | |||
| JP2013105881A | 2013-05-30 | |||
| JP2011091100A | 2011-05-06 | |||
| JP2009509339A | 2009-03-05 |
Attorney, Agent or Firm:
KITAYAMA, Mikio (JP)
Mikio Kiyama (JP)
Mikio Kiyama (JP)
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