Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/045467
Kind Code:
A1
Abstract:
The present disclosure relates to the field of semiconductors, and provides a method for manufacturing a semiconductor structure and a semiconductor structure. The method for manufacturing a semiconductor structure comprises: forming a first thin film layer having an oxyphilic element on the surface of a provided substrate by using a first thin film deposition process; performing surface treatment on the first thin film layer to inhibit oxidation of the first thin film layer; and by using a second thin film deposition process different from the first thin film deposition process, forming a second thin film layer on the surface of the first thin film layer having undergone the surface treatment.
Inventors:
WU CONGJUN (CN)
Application Number:
PCT/CN2023/070311
Publication Date:
March 07, 2024
Filing Date:
January 04, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/28; H01L29/49
Foreign References:
| CN115312379A | 2022-11-08 | |||
| US5741725A | 1998-04-21 | |||
| US6432801B1 | 2002-08-13 | |||
| US10720431B1 | 2020-07-21 | |||
| CN107017156A | 2017-08-04 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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