Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND RESIST UNDERLAYER FILM FORMING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2022/196485
Kind Code:
A1
Abstract:
An objective of the present invention is to provide a method for manufacturing a semiconductor substrate by using a resist underlayer film forming composition capable of forming a resist underlayer film having excellent solvent resistance and pattern rectangularity, and also to provide the resist underlayer film forming composition. The method for manufacturing a semiconductor substrate comprises a step of directly or indirectly applying a resist underlayer film forming composition to a substrate, a step of applying a resist film forming composition to the resist underlayer film formed in the resist underlayer film forming composition application step, a step of exposing the resist film formed in the resist film forming composition application step by radiation, and a step of developing at least the exposed resist film, wherein the resist underlayer film forming composition includes a polymer including a sulfonic acid group and a solvent.
Inventors:
DEI SATOSHI (JP)
MIYAUCHI HIROYUKI (JP)
TANAKA RYOTARO (JP)
YOSHINAKA SHO (JP)
YONEDA EIJI (JP)
MIYAUCHI HIROYUKI (JP)
TANAKA RYOTARO (JP)
YOSHINAKA SHO (JP)
YONEDA EIJI (JP)
Application Number:
PCT/JP2022/010261
Publication Date:
September 22, 2022
Filing Date:
March 09, 2022
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/11; G03F7/20; G03F7/26; G03F7/30; G03F7/32
Foreign References:
| JP2010237491A | 2010-10-21 | |||
| JP2009511969A | 2009-03-19 | |||
| JP2008239646A | 2008-10-09 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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