METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2008/013032

Kind Code:

A1

Abstract:

This invention provides a method for manufacturing a semiconductor substrate, comprising the steps of forming an SiGe composition inclination layer and an SiGe composition fixed layer on an Si single crystal substrate, flattening a surface of the SiGe composition fixed layer, removing a native oxide film on the surface of the flattened SiGe composition fixed layer, and forming a strained Si layer on the SiGe composition fixed layer from which the native oxide film on the surface has been removed. The SiGe composition inclination layer and the SiGe composition fixed layer are formed at a temperature T1 which is above 800ºC, and the native oxide film on the surface of the SiGe composition fixed layer is removed by heat treatment at a temperature T2 which is 800ºC or above and is below the temperature T1 under a reducing gas atmosphere. The strained Si layer is formed at a temperature T3 which is below the temperature T1. According to the above constitution, the strained Si layer can be epitaxially grown on the flattened SiGe layer without sacrificing the flatness of the surface of the SiGe layer.

Inventors:

OKA SATOSHI (JP)
NOTO NOBUHIKO (JP)

Application Number:

PCT/JP2007/063349

Publication Date:

January 31, 2008

Filing Date:

July 04, 2007

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK (JP)
OKA SATOSHI (JP)
NOTO NOBUHIKO (JP)

International Classes:

H01L21/205; H01L21/20

Domestic Patent References:

WO2004086473A1

2004-10-07

Foreign References:

JP2006173323A	2006-06-29
JP2004363510A	2004-12-24
JP2003142686A	2003-05-16
JP2001148473A	2001-05-29
JP2000513507A	2000-10-10

Other References: