Title:
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/105349
Kind Code:
A1
Abstract:
In this method for manufacturing a silicon carbide semiconductor device, thermal etching is performed with respect to a silicon carbide layer by supplying a process gas to the silicon carbide layer, while heating the silicon carbide layer, said process gas being chemically reactive to silicon carbide. A carbon film (50) is formed on the silicon carbide layer by the thermal etching. The silicon carbide layer is heat treated such that carbon is diffused from the carbon film (50) into the silicon carbide layer.
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Inventors:
HIYOSHI TORU (JP)
MASUDA TAKEYOSHI (JP)
HATAYAMA TOMOAKI (JP)
MASUDA TAKEYOSHI (JP)
HATAYAMA TOMOAKI (JP)
Application Number:
PCT/JP2012/080592
Publication Date:
July 18, 2013
Filing Date:
November 27, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
NAT UNIV CORP NARA INST (JP)
NAT UNIV CORP NARA INST (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12; H01L29/739
Foreign References:
| JP2009190953A | 2009-08-27 | |||
| JP2009123753A | 2009-06-04 | |||
| JP2008053667A | 2008-03-06 |
Other References:
LIUTAURAS STORASTAL: "Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation", APPL. PHYS. LETT., vol. 90, 2007, pages 062116
LIUTAURAS STORASTAL: "Enhanced annealing of the Zi/ defect in 4H-SiC epilayers", J. APPL. PHYS., vol. 103, 2008, pages 013705
LIUTAURAS STORASTAL: "Enhanced annealing of the Zl/2 defect in 4H-SiC epilayers", J. APPL. PHYS., vol. 103, 2008, pages 013705
See also references of EP 2804215A4
LIUTAURAS STORASTAL: "Enhanced annealing of the Zi/ defect in 4H-SiC epilayers", J. APPL. PHYS., vol. 103, 2008, pages 013705
LIUTAURAS STORASTAL: "Enhanced annealing of the Zl/2 defect in 4H-SiC epilayers", J. APPL. PHYS., vol. 103, 2008, pages 013705
See also references of EP 2804215A4
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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Claims:
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