Title:
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/010382
Kind Code:
A1
Abstract:
This method for manufacturing a silicon carbide semiconductor device includes: a step of preparing a silicon carbide substrate; a step of forming an insulating film on one main surface of the silicon carbide substrate; a step of forming a contact hole in the insulating film and exposing the one main surface at the bottom surface of the contact hole; a step of forming an Si film on the bottom surface and side surfaces of the contact hole and the top surface of the insulating film; a step of removing the Si film at the bottom surface of the contact hole and exposing the one main surface; a step of forming an Ni film on the bottom surface of the contact hole and the Si film; and a step of performing heat treatment after forming the Ni film. A first alloy layer that is to be an ohmic electrode by Si contained in the silicon carbide substrate and the Ni film, is formed on the bottom surface of the contact hole by the heat treatment, and a second alloy layer is formed by the Si film and the Ni film on the top surface of the insulating film.
Inventors:
TAMASO HIDETO (JP)
Application Number:
PCT/JP2020/027284
Publication Date:
January 21, 2021
Filing Date:
July 13, 2020
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/28; H01L29/12; H01L29/78
Foreign References:
| JP2013058587A | 2013-03-28 | |||
| JP2003158259A | 2003-05-30 | |||
| JP2019075472A | 2019-05-16 | |||
| JP2001185507A | 2001-07-06 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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