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Title:
METHOD FOR MANUFACTURING SILICON-COATED COPPER, SILICON-COATED ANTI-OXIDATION COPPER USING SAME, AND SEMICONDUCTOR DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2022/250343
Kind Code:
A1
Abstract:
The present invention relates to a method for manufacturing silicon-coated copper, silicon-coated anti-oxidation copper using same, and a semiconductor device using same and, more particularly, to copper having a silicon (Si)-coated surface, wherein the copper forms a silicon (Si)-oxygen (O)-copper (Cu) mixed layer passivation film by depositing silicon (Si) so as to have resistance to oxidation while maintaining electrical characteristics. The silicon-coated anti-oxidation copper according to the present invention is characterized in that a silicon (Si)-oxygen (O) mixed layer is formed by depositing silicon (Si). The silicon-coated copper is characterized by comprising: a copper layer (10); a cycox layer (20) formed by mixing silicon (Si)-oxygen (O)-copper (Cu) on the top of the copper layer (10); a first silicon (Si)-oxygen (O) mixed layer (30) formed on the top of the cycox layer (20); a silicon (Si) layer (40) formed on the top of the first silicon (Si)-oxygen (O) mixed layer (30); and a second silicon (Si)-oxygen (O) mixed layer (50) formed on the top of the silicon (Si) layer (40). The method for manufacturing silicon-coated copper according to the present invention is characterized in that silicon (Si) is deposited through a single sputtering process.

Inventors:
JEONG SE YOUNG (KR)
KIM SU JAE (KR)
Application Number:
PCT/KR2022/006804
Publication Date:
December 01, 2022
Filing Date:
May 12, 2022
Export Citation:
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Assignee:
NAT UNIV PUSAN IND UNIV COOP FOUND (KR)
International Classes:
C23C14/06; C23C14/58; H01L23/00
Foreign References:
KR20170116129A2017-10-18
KR100863388B12008-10-13
KR20170046147A2017-04-28
US20140311900A12014-10-23
KR20180120607A2018-11-06
KR20070045269A2007-05-02
Attorney, Agent or Firm:
KIM, Jong Seok (KR)
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