Title:
METHOD FOR MANUFACTURING SILICON ON INSULATOR
Document Type and Number:
WIPO Patent Application WO/2007/012290
Kind Code:
A1
Abstract:
A method for manufacturing silicon wafer on insulator is achieved by combining ion implantation with bonding technique. Characteristics are that first, method of ion implantation is adopted to form an erosion barrier layer; next, the device wafer is bonded to the support wafer, the back side of the device wafer is thinned to a certain thickness by means of bonding and thinning method; then, the layer of ion implantation in the device wafer is used for an erosion self-stopping layer; The thickness of the residual device wafer is eroded to the erosion self-stopping layer by chemical erosion method; finally, fine polishing or oxidation is carried out for the residual silicon layer to form SOI product. The invention can adjust thickness of buried layer within larger range. The layer of ion implantation as self-stopping layer can control thickness and uniformness of top layer of silicon accurately by above-mentioned process. The thickness evenness of top layer silicon can be improved, and the thickness of buried layer can be adjusted flexibly.
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Inventors:
CHEN MENG (CN)
Application Number:
PCT/CN2006/001901
Publication Date:
February 01, 2007
Filing Date:
July 28, 2006
Export Citation:
Assignee:
SHANGHAI SIMGUI TECHNOLOGY CO (CN)
CHEN MENG (CN)
CHEN MENG (CN)
International Classes:
H01L21/762; H01L21/20; H01L21/265; H01L21/84
Domestic Patent References:
| WO1998042010A1 | 1998-09-24 | |||
| WO2005004233A1 | 2005-01-13 |
Foreign References:
| US6140210A | 2000-10-31 |
Other References:
See also references of EP 1914799A4
Attorney, Agent or Firm:
SHANGHAI ZHI XIN PATENT AGENT LTD. (446 Zhao Jia Bang Road, Shanghai 1, CN)
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