Title:
METHOD FOR MANUFACTURING A STRUCTURE COMPRISING A BARRIER LAYER TO PREVENT DIFFUSION OF ATOMIC SPECIES
Document Type and Number:
WIPO Patent Application WO/2024/002608
Kind Code:
A1
Abstract:
The invention relates to a structure (1) comprising a support (2) made of an electric-charge-trapping layer (2b) arranged on the surface of a base substrate (2a) and comprising a thin film (4) made of a lithium-based material and transferred onto the support (2). The structure (1) comprises an interlayer dielectric layer (3) arranged between, and in contact with, the support (2) and the thin film (4). The interlayer dielectric layer (3) comprises a first dielectric layer (31) arranged on, and in contact with, the trapping layer (2b), a silicon nitride barrier layer (5) arranged on, and in contact with, the first dielectric layer (31) and a second dielectric layer (32) arranged on, and in contact with, the barrier layer (5).
Inventors:
MOUREY ODILE (FR)
CAPELLO LUCIANA (FR)
HUYET ISABELLE (FR)
KERDILES SÉBASTIEN (FR)
LEFORESTIER SOAZIG (FR)
CAPELLO LUCIANA (FR)
HUYET ISABELLE (FR)
KERDILES SÉBASTIEN (FR)
LEFORESTIER SOAZIG (FR)
Application Number:
PCT/EP2023/064571
Publication Date:
January 04, 2024
Filing Date:
May 31, 2023
Export Citation:
Assignee:
SOITEC SILICON ON INSULATOR (FR)
COMMISSARIAT ENERGIE ATOMIQUE (FR)
COMMISSARIAT ENERGIE ATOMIQUE (FR)
International Classes:
H01L21/762; H01L21/02; H10N30/072
Domestic Patent References:
| WO2022023630A1 | 2022-02-03 | |||
| WO2021008742A1 | 2021-01-21 | |||
| WO2022023630A1 | 2022-02-03 |
Foreign References:
| US20180114720A1 | 2018-04-26 | |||
| US20180158721A1 | 2018-06-07 | |||
| FR2860341A1 | 2005-04-01 | |||
| FR2933233A1 | 2010-01-01 | |||
| FR2953640A1 | 2011-06-10 | |||
| US20150115480A1 | 2015-04-30 | |||
| US7268060B2 | 2007-09-11 | |||
| US6544656B1 | 2003-04-08 | |||
| US20180114720A1 | 2018-04-26 | |||
| US20180158721A1 | 2018-06-07 |
Attorney, Agent or Firm:
IP TRUST (FR)
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