Title:
METHOD FOR MANUFACTURING THINNED WAFER AND DEVICE FOR MANUFACTURING THINNED WAFER
Document Type and Number:
WIPO Patent Application WO/2021/193060
Kind Code:
A1
Abstract:
[Problem] To provide a method for manufacturing a thinned wafer and a device for manufacturing a thinned wafer, which can prevent breakage of a thinned wafer as much as possible at a time of separating a residual wafer from the thinned wafer. [Solution] A method for manufacturing a thinned wafer is provided with: a weak layer forming step for forming a planar weak layer WL along one surface WFA of a semiconductor wafer WF, and sectioning the semiconductor wafer WF into a thinned wafer WF1 and a residual wafer WF2 with the weak layer WL as a boundary; and a separating step for supporting at least one of the thinned wafer WF1 side and the residual wafer WF2 side in the semiconductor wafer WF, and separating the thinned wafer WF1 and the residual wafer WF2. In the separating step, from one end portion WFF on an outer rim portion of the semiconductor wafer WF toward the other end portion WFR on the outer rim portion of the semiconductor wafer WF, the thinned wafer WF1 and the residual wafer WF2 are gradually separated.
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Inventors:
IZUMI NAOFUMI (JP)
Application Number:
PCT/JP2021/009493
Publication Date:
September 30, 2021
Filing Date:
March 10, 2021
Export Citation:
Assignee:
LINTEC CORP (JP)
International Classes:
B23K26/53; H01L21/304; H01L21/683
Domestic Patent References:
| WO2019044530A1 | 2019-03-07 |
Foreign References:
| JP2017157777A | 2017-09-07 | |||
| JP2019134155A | 2019-08-08 |
Attorney, Agent or Firm:
YAMAZAKI, Takahiro et al. (JP)
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