Title:
METHOD FOR MANUFACTURING THREE-DIMENSIONAL SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/167687
Kind Code:
A1
Abstract:
A hard mask (HM) in which two or more lines formed from mutually different materials (A, B, C) are arranged in sequence is formed on a stack (S) obtained by alternately stacking an oxide film and a nitride film or an oxide film and a polysilicon film on a substrate. A photoresist (PR) is applied on the hard mask. The photoresist is trimmed until one line becomes exposed from an edge part of the hard mask. One line of the hard mask exposed from under the photoresist is etched. A portion of the stack exposed from under the hard mask is etched. The etching of the photoresist, the hard mask, and the stack is repeated while the etching conditions are varied.
Inventors:
KIBI KAZUO (JP)
TAKAHASHI AKIHIRO (JP)
SAKAMOTO WATARU (JP)
TAKAHASHI AKIHIRO (JP)
SAKAMOTO WATARU (JP)
Application Number:
PCT/JP2019/005736
Publication Date:
September 06, 2019
Filing Date:
February 18, 2019
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L27/11548; H01L21/336; H01L27/11556; H01L27/11575; H01L27/11582; H01L29/788; H01L29/792
Foreign References:
| JP2015133355A | 2015-07-23 | |||
| JP2013004690A | 2013-01-07 | |||
| JP2012109571A | 2012-06-07 | |||
| US20160240549A1 | 2016-08-18 | |||
| US20140054789A1 | 2014-02-27 | |||
| US20170213723A1 | 2017-07-27 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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