Title:
METHOD FOR MANUFACTURING TWO-DIMENSIONAL SEMICONDUCTOR QUANTUM DOT ARRAY
Document Type and Number:
WIPO Patent Application WO/2024/063266
Kind Code:
A1
Abstract:
The present invention provides a method for manufacturing a quantum dot array, comprising the steps of: forming a two-dimensional transition metal dichalcogenide compound layer on a substrate; transferring, to the two-dimensional transition metal dichalcogenide compound layer, an alumina thin film having a plurality of through-holes; using the alumina thin film to form a metal pattern; using the metal pattern as a mask to remove the two-dimensional transition metal dichalcogenide compound layer not overlapping the metal pattern on a plane; and removing the metal pattern to form a quantum dot array.
Inventors:
SUH JOONKI (KR)
YEO JEONGIN (KR)
LEE JAE-UNG (KR)
YEO JEONGIN (KR)
LEE JAE-UNG (KR)
Application Number:
PCT/KR2023/008945
Publication Date:
March 28, 2024
Filing Date:
June 27, 2023
Export Citation:
Assignee:
ULSAN NAT INST SCIENCE & TECH UNIST (KR)
UNIV AJOU IND ACADEMIC COOP FOUND (KR)
UNIV AJOU IND ACADEMIC COOP FOUND (KR)
International Classes:
H10K50/115; C09K11/56; C09K11/88; H10K71/00
Foreign References:
KR20100019722A | 2010-02-19 | |||
KR20150064470A | 2015-06-11 | |||
KR20120037882A | 2012-04-20 | |||
KR102294478B1 | 2021-08-26 | |||
KR20100027016A | 2010-03-10 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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