Title:
METHOD FOR MEASURING CONTACT ANGLE OF SILICON WAFER AND METHOD FOR EVALUATING SURFACE STATE OF SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2023/017692
Kind Code:
A1
Abstract:
The present invention provides a method for measuring a contact angle of a silicon wafer, the method being capable of detecting a severe hydrophilicity level difference in a silicon wafer surface, the difference being not able to be detected by a contact angle measurement by means of pure water. A method for measuring a contact angle of a silicon wafer according to the present invention comprises: a step in which a droplet is dropped on the surface of a silicon wafer; and a step in which the contact angle of the surface of the silicon wafer is determined from an image of the droplet. With respect to this method for measuring a contact angle of a silicon wafer, the droplet is formed of an aqueous solution which has a surface tension that is higher than the surface tension of pure water.
Inventors:
MAKISE SAYAKA (JP)
TAKAHASHI RYOSUKE (JP)
KUBOTA MAMI (JP)
MITSUGI NORITOMO (JP)
SAMATA SHUICHI (JP)
TAKAHASHI RYOSUKE (JP)
KUBOTA MAMI (JP)
MITSUGI NORITOMO (JP)
SAMATA SHUICHI (JP)
Application Number:
PCT/JP2022/026091
Publication Date:
February 16, 2023
Filing Date:
June 29, 2022
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
H01L21/66; G01N13/00; H01L21/304
Domestic Patent References:
| WO2008013151A1 | 2008-01-31 |
Foreign References:
| JP2008088258A | 2008-04-17 | |||
| JP3049453U | 1998-06-09 | |||
| JP2009074142A | 2009-04-09 | |||
| JP2005127988A | 2005-05-19 | |||
| JP2003168668A | 2003-06-13 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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