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Title:
METHOD FOR MEASURING DISTANCE BETWEEN REFERENCE REFLECTOR AND MELT SURFACE, METHOD FOR CONTROL THE POSITION OF MELT SURFACE USING SAME, AND SILICON SINGLE CRYSTAL PRODUCING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2007/122833
Kind Code:
A1
Abstract:
A method for measuring the relative distance between a reference reflector installed above the melt surface and the melt surface when a silicon single crystal is pulled up from the material melt in a crucible by the CZ method. The method is characterized in that the silicon single crystal is pulled up while applying a magnetic field, the real image of the reference reflector and the mirror image of the reference reflector reflected from the melt surface are captured by detecting means, the captured real image of the reference reflector and the captured mirror image are separately processed, the relative distance between the real and mirror images of the reference reflector is computed from the processed images, and thus the relative distance between the reference reflector and the melt surface is measured. With this, a method for more stably and more accurately measuring the distance between the reference reflector and the melt surface is provided.

Inventors:
URANO MASAHIKO (JP)
FUSEGAWA IZUMI (JP)
Application Number:
PCT/JP2007/051548
Publication Date:
November 01, 2007
Filing Date:
January 31, 2007
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK (JP)
URANO MASAHIKO (JP)
FUSEGAWA IZUMI (JP)
International Classes:
C30B29/06; C30B15/26
Domestic Patent References:
WO2001063027A12001-08-30
Foreign References:
JP2002527341A2002-08-27
JP2003055084A2003-02-26
JP2001342095A2001-12-11
JPH06116083A1994-04-26
JPH07330484A1995-12-19
JP2000264779A2000-09-26
JPH07257991A1995-10-09
JPH0656588A1994-03-01
JPH07257991A1995-10-09
JPH06116083A1994-04-26
JP2001342095A2001-12-11
Other References:
See also references of EP 2011905A4
CZOCHRALSKI SILICON, JPN. J. APPL. PHYS., vol. 37, 1998, pages 1667 - 1670
"Evaluation of microdefects in as-grown silicon crystals", MAT. RES. SOC. SYMP. PROC., vol. 262, 1992, pages 51 - 56
"The mechanism of swirl defects formation in silicon", JOURNAL OF CRYSTAL GROWTH, 1982, pages 625 - 643
THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH COOPERATION, vol. 25, no. 5, 1998
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (6-4 Motoasakusa 2-chome,Taito-k, Tokyo 41, JP)
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